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RSD200N10
? Electrical characteristics (Ta=25 ? C)
Data Sheet
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Symbol
I GSS
V (BR)DSS
I DSS
V GS(th)
R DS(on) ?
Min.
?
100
?
1.0
?
?
?
Typ.
?
?
?
?
41
44
45
Max.
± 10
?
10
2.5
52
58
59
Unit
μ A
V
μ A
V
m Ω
m Ω
m Ω
Conditions
V GS =± 20V, V DS = 0V
I D = 1mA, V GS = 0V
V DS = 100V, V GS = 0V
V DS = 10V, I D = 1mA
I D = 10A, V GS = 10V
I D = 10A, V GS = 4.5V
I D = 10A, V GS = 4.0V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
| Y fs |
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
14
?
?
?
?
?
?
?
?
?
?
?
2200
180
110
18
61
128
193
48.5
5.5
13
?
?
?
?
?
?
?
?
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I D = 10A, V DS = 10V
V DS = 25V
V GS = 0V
f = 1MHz
I D = 10A, V DD 50V
V GS = 10V
R L = 5 Ω
R G = 10 Ω
V DD 50V
I D = 20A
V GS = 10V
R L = 2.5 Ω / R G = 10 Ω
? Pulsed
? Body diode characteristics (Source-drain) (Ta=25 ? C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
1.5
Unit
V
Conditions
I S = 20A, V GS =0V
? Pulsed
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2012.04 - Rev.B
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